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Zener Diode
UMZ30N
Applications Voltage regulation (Common anode dual chips) Dimensions (Unit : mm) Land size figure(Unit : mm)
1.3
Each lead has same dimension
0.65
Features 1)Small mold type.(UMD3) 2)High reliability
0.9Min.
0.8Min.
UMD3
Construction Silicon epitaxial planar
Structure
Taping specificationsUnit : mm
Absolute maximum ratings (Ta=25C) Parameter Symbol Power dissipation (*1 P Junction temperature Tj Storage temperature Tstg (*1) Total of 2 elements Electrical characteristi (Ta=25C) Parameter Symbol VZ Zener voltage IR Reverse current
Limits 200 150 -55 to +150
Unit mW C C
Min. 29.19 -
Typ. -
Max. 30.69 0.10
Unit V A
Conditions IZ=5mA VR=23V
www.rohm.com (c)2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.12 - Rev.A
1.6
Data Sheet
Electrical characteristi curves
10
Ta=-25C
Ta=25C
Ta=75C
Ta=125C
100 10 1
Ta=125C
100 f=1MHz
REVERSE CURRENT:IR (nA)
ZENER CURRENT:Iz(mA)
Ta=75C
1
Ta=25C 0.1 0.01 0.001 0.0001
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
25
0.1
10
Ta=-25C
0.01
0.001 27 28 29 30 31 32 33 34
0
5
10
15
20
1 0 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 25
ZENER VOLTAGE : Vz(V) Vz-Iz CHARACTERISTICS
REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS
30.3
REVERSE CURRENT : IR(nA)
ZENER VOLTAGE:Vz()
30.2
CAPACITANCE BETWEENTERMINALS:Ct(pF)
Ta=25C IZ=5mA n=30pcs
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 AVE:0.082nA Ta=25C VR=23V n=30pcs
10 9 8 7 6 5 4 3 2 1 0 IR DISPERSION MAP Ct DISPERSION MAP AVE:9.09pF Ta=25C f=1MHz VR=0V n=10pcs
30.1
30 AVE:30.01V
29.9
29.8
0
Vz DISPERSION MAP
10000
DYNAMIC IMPEDANCE:Zz()
1000
100
10
1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 10
www.rohm.com (c)2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.12 - Rev.A
Notice
Notes
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